Product

CU TARGET

High purity copper sputtering targets designed for semiconductor wafer deposition. Optimized for stable thin film growth and consistent electrical performance in 300 mm wafer manufacturing environments.

PRODUCT OVERVIEW

Copper targets are widely used in semiconductor deposition processes where high electrical conductivity and reliable film formation are required. Copper thin films are commonly applied in metal interconnect structures and conductive layers within advanced microelectronic devices.

Designed for 300 mm wafer systems, copper targets support stable sputtering conditions and controlled material transfer during deposition. High purity copper helps minimize contamination risks while ensuring repeatable thin film characteristics across large wafer surfaces.

SPECIFICATIONS

Purity: 4N5


Form: Sputtering target


Dimensions: For รธ300 mm wafer


Composition: Copper (Cu)


Application: Cu deposition for 300 mm wafer

APPLICATIONS

Copper sputtering targets are used in semiconductor wafer deposition processes where conductive metal layers are required. In microelectronics manufacturing, copper films play a key role in forming interconnect structures that enable efficient electrical signal transmission.

Stable deposition performance is essential in 300 mm wafer production, where uniform film thickness and consistent electrical properties must be maintained across the entire substrate.

CUSTOMIZATION OPTIONS

Copper targets can be manufactured to match specific sputtering system configurations and process requirements. Target dimensions, thickness and bonding configurations may be customized depending on the equipment used in the deposition process.

Material purity levels and target specifications can also be aligned with contamination control requirements in semiconductor fabrication environments.

TECHNICAL FEATURES

Copper targets provide stable plasma interaction and predictable erosion behavior during sputtering. High purity copper supports low impurity levels and reliable deposition performance in semiconductor manufacturing processes.

Consistent target quality contributes to uniform film thickness, stable electrical conductivity and reliable thin film characteristics across 300 mm wafer substrates.

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