PRODUCT

TI TARGET

High purity titanium sputtering targets designed for semiconductor wafer deposition. Optimized for stable thin film growth and process repeatability in 300 mm wafer manufacturing environments.

PRODUCT OVERVIEW

Titanium targets are widely used in semiconductor deposition processes where adhesion, barrier performance and film integrity are critical. Titanium thin films are commonly applied as adhesion layers and functional metal layers within wafer fabrication workflows.

Designed for 300 mm wafer systems, titanium targets support stable sputtering conditions and consistent film formation across large substrate areas. High purity material helps reduce contamination risk and supports reliable process control in high-throughput manufacturing.

SPECIFICATIONS

Purity: 4N5


Form: Sputtering target


Dimensions: For รธ300 mm wafer


Composition: Titanium (Ti)


Application: Ti deposition for 300 mm wafer

APPLICATIONS

Titanium sputtering targets are used in semiconductor wafer deposition where controlled thin film properties are required. Typical use cases include adhesion layers, diffusion barrier related processes and metal stack integration in microelectronics manufacturing.

In 300 mm wafer lines, stable deposition behavior and consistent target performance help maintain uniform film thickness and repeatable electrical and mechanical properties across production runs.

CUSTOMIZATION OPTIONS

Titanium targets can be supplied to match specific tool configurations and sputtering requirements. Target dimensions and mounting or bonding configurations can be customized depending on the deposition system design and process conditions.

Material purity grades and target specifications can also be aligned with contamination control requirements in semiconductor manufacturing environments.

TECHNICAL FEATURES

Titanium targets provide stable plasma interaction and predictable erosion behavior during sputtering. High purity titanium supports low contamination risk and repeatable deposition performance, which is essential for semiconductor process stability.

Consistent target quality contributes to uniform coating thickness, reliable film adhesion and controlled thin film characteristics across 300 mm wafer substrates.

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